METHOD AND DEVICE FOR PRODUCING GLOBULAR GRAINS OF HIGH-PURITY SILICON HAVING A DIAMETER OF BETWEEN 50 µm AND 300 µm, AND USE OF THE SAME

摘要

The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of between 50 νm and 300 νm can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of 50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.