An integrated circuit apparatus comprises a semiconductor substrate having a plurality of devices formed thereon, one or more metallization layers to interconnect the plurality of devices, and a bond pad formed over the one or more metallization layers and electrically coupled to at least one of the metallization layers. A first passivation layer is formed over the bond pad and over the metallization layers and a redistribution interconnect formed on the passivation layer. A first via formed through the first passivation layer electrically couples the redistribution interconnect to the bond pad. A second passivation layer is formed on the redistribution interconnect to prevent thermomechanical degradation and improve electromigration performance. A dielectric layer is formed on the second passivation layer and a die-side bump is formed on the dielectric layer. A second via formed through the dielectric layer and through the second passivation layer electrically couples the die-side bump to the redistribution interconnect.
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