Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material

摘要

Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.