Fabrication method for active structure of multi-gate transistor with improved performance and active structure and multi-gate transistor fabricated thereby

摘要

For fabricating a multi-gate transistor, at least one active pattern having uniform critical dimension is formed. Epitaxy structures are grown from exposed portions of the active pattern. A channel region of the transistor is formed from at least two surfaces of the active pattern. Source and drain are formed using the epitaxy structures.