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CLUSTER TYPE BLANK MASK AND ITS MANUFACTURING PROCESS AND MANUFACTURNG METHOD OF PHOTOMASK THEREBY

机译:团簇型空白膜及其制造工艺和光掩模的制造方法

摘要

A cluster type blank mask, a method for manufacturing blank, and photo masks are provided to reduce scum in photo mask manufacturing by controlling ammonia on photoresist. An anti-reflective coating layer(6) and/or a light shielding layer(4) are stacked on a transparent substrate(2) using reactive sputtering and vacuum depositing schemes so as to improve the particles of a metal layer. Resists are coated on the anti-reflective coating layer and/or light shielding layer. The anti-reflective coating layer and light shielding layer are formed based on a metal in a vacuum chamber used inert gas and reactive gas using reactive sputtering and vacuum depositing schemes. The metal is at least one selected from a group consisting of Co, Ta, W, Mo, Cr, V, Pd, Ti, Nb, Zn, Hf, Ge, Al, Pt, Mn, Fe, Si, Ni, Cd, Zr, Mg, Li, Se, Cu, Y, and S. The inert gas is at least one selected from a group consisting of Ar, He, Ne, and Xe. The reactive gas is at least one selected from a group consisting of O2, CO, CO2, N2O, NO, NO2, NH3, CH4, and F.
机译:提供了簇型空白掩模,制造空白的方法和光掩模,以通过控制光刻胶上的氨来减少光掩模制造中的浮渣。使用反应溅射和真空沉积方案将抗反射涂层(6)和/或遮光层(4)堆叠在透明基板(2)上,以改善金属层的颗粒。抗蚀剂被涂覆在抗反射涂层和/或遮光层上。减反射涂层和遮光层是在真空室中基于金属形成的,该真空室使用了惰性气体和反应气体,并采用了反应溅射和真空沉积方案。所述金属是选自以下的至少一种:Co,Ta,W,Mo,Cr,V,Pd,Ti,Nb,Zn,Hf,Ge,Al,Pt,Mn,Fe,Si,Ni,Cd, Zr,Mg,Li,Se,Cu,Y和S。惰性气体是选自Ar,He,Ne和Xe的至少一种。反应性气体是选自由O 2,CO,CO 2,N 2 O,NO,NO 2,NH 3,CH 4和F组成的组中的至少一种。

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