A manufacturing method of SiC nanowire is provided to obtain SiC nanowire having excellent field emission property which is useful for the preparation of semiconductor nanostructure field emission device in an economical process and selective patterning as a cathode material by employing SiC compound. A manufacturing method of SiC nanowire comprises steps of: forming a catalyst layer which is deposited with a catalyst selected from gold, nickel, cobalt or alloy thereof, on a substrate; feeding 1-20sccm of dichloromethylvinylsilane and 100-1000sccm of carrier gas in a reducing atmosphere which is maintained at 900-1200deg.C and maintaining the state for 10-120 minutes. The nanowire has a diameter of 200-200nm and a length of 10-100mum. The substrate is silicone or sapphire. The carrier gas is inert gas or reducing gas, comprising at least one selected from hydrogen gas, Ar gas, N2 gas and CH4 gas.
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