The invention concerns a method for treating a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded to the substrate, the method including a treatment for improving the electrical properties of the layer and/or of the interface of the Ge layer with the underlying layer. The invention is characterized in that said treatment is a heat treatment implemented at a temperature ranging between 500°C and 600°C for a maximum of 3 hours. The invention also concerns a method for producing a structure comprising a Ge layer, the method including bonding a donor substrate comprising at least in its upper part a thin Ge layer and a receiver substrate, characterized in that it includes the following steps: (a) bonding the donor substrate to the receiver substrate such that the Ge layer is located in the neighborhood of the bonding interface; (b) eliminating part of the donor substrate not including the Ge layer; (c) treating the structure comprising the receiver substrate and the Ge layer in accordance with the treatment method.
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