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PHASE CHANGE MEMORY DEVICE WITH SMALL TRANSITION VOLUME AND METHOD OF FORMING THE SAME
PHASE CHANGE MEMORY DEVICE WITH SMALL TRANSITION VOLUME AND METHOD OF FORMING THE SAME
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机译:具有小过渡体积的相变存储器及其形成方法
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摘要
A phase change memory device having a small transition volume and a method for forming the same are provided to reduce remarkably current necessary for converting the transition volume to a crystalline state or an amorphous state. A bottom electrode(75) is formed on a top surface of a substrate(51). An interlayer dielectric includes a contact hole for exposing the bottom electrode and is formed to cover the interlayer dielectric. A resistant material pattern(79) is formed to fill up the contact hole. A phase change pattern(77) is inserted between the resistant material pattern and the interlayer dielectric and is extended between the resistant material pattern and the bottom electrode. A top electrode(85) comes in contact with the phase change pattern. The resistant material pattern has a resistance higher than that of the phase change pattern. The top electrode is electrically connected through the phase change pattern to the bottom electrode.
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