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METHOD AND APPARATUS FOR IN-SITU MONITORING OF PLASMA ETCH AND DEPOSITION PROCESSES USING A PULSED BROADBAND LIGHT SOURCE
METHOD AND APPARATUS FOR IN-SITU MONITORING OF PLASMA ETCH AND DEPOSITION PROCESSES USING A PULSED BROADBAND LIGHT SOURCE
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机译:利用脉冲宽带信号原位监测等离子体刻蚀和沉积过程的方法和装置
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摘要
An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.
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