SEMICONDUCTOR PROBE STRUCTURE USING IMPACT-IONIZATION METAL OXIDE SEMICONDUCTOR, AND MANUFACTURE METHOD THEREOF

摘要

A semiconductor probe using an impact-ionization semiconductor device is provided to remarkably improve the limit of sensitivity of a resistive probe and easily adjust the quantity of charges capable of being detected by a probe by developing a new probe structure for easily adjusting the band energy of a source. One tilted surface of a probe is formed by an anisotropic etch process using a first etch mask pattern formed on a silicon substrate. After impurities are doped into the exposed substrate to form a first semiconductor electrode region(16), the first etch mask pattern is removed. A second etch mask pattern opposite to the direction of the first etch mask pattern is formed on the silicon substrate. Space layers are formed on the sidewalls of the second etch mask pattern. After the exposed silicon substrate is anisotropically etched to form an opposite tilted surface of the probe, the second etch mask pattern is removed. Impurities are doped into the exposed substrate to form a second semiconductor electrode region(18), and the second etch mask pattern is removed. A silicon oxide layer pattern is formed on the resultant structure by a known method. Space layers are formed on both sidewalls of the silicon oxide layer pattern. By using the space layer, a predetermined depth of the silicon substrate is etched by a photolithography process, and the space layer is removed. The first semiconductor electrode region can be a source terminal, and the second semiconductor electrode region can be a drain terminal.