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Method of forming selectively a catalyst for nanoscale conductive structure and method of forming the nanoscale conductive structure

机译:选择性地形成用于纳米级导电结构的催化剂的方法和形成纳米级导电结构的方法

摘要

to which is provided a method for selectively forming a conductive structure of nano- size , the nano- size on a substrate an insulating film having an opening exposing the area to be formed and forming a conductive structure , a small number to prevent the surface of the insulating film is formed in which the catalyst is formed , and optionally a catalyst is formed on the substrate of the bottom opening . Thus, nanoscale conductive structures can be grown from the catalyst selectively formed in the opening floor .
机译:本发明提供了一种用于选择性地形成纳米尺寸的导电结构的方法,该纳米尺寸在基板上具有绝缘膜,该绝缘膜的开口暴露了待形成的区域并形成导电结构,该绝缘膜的数量很少以防止表面形成纳米结构。形成形成催化剂的绝缘膜,并任选在底部开口的衬底上形成催化剂。因此,可以从在开口底板中选择性形成的催化剂中生长出纳米级导电结构。

著录项

  • 公开/公告号KR100822799B1

    专利类型

  • 公开/公告日2008-04-17

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20060037315

  • 申请日2006-04-25

  • 分类号B82B3/00;C01B31/02;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:14

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