to which is provided a method for selectively forming a conductive structure of nano- size , the nano- size on a substrate an insulating film having an opening exposing the area to be formed and forming a conductive structure , a small number to prevent the surface of the insulating film is formed in which the catalyst is formed , and optionally a catalyst is formed on the substrate of the bottom opening . Thus, nanoscale conductive structures can be grown from the catalyst selectively formed in the opening floor .
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