Aluminum compound for forming aluminum films by chemical vapor deposition and their synthesis

摘要

The present invention relates to a method of producing the precursor compounds and the compounds used to deposit on the substrate by a thin aluminum film to chemical vapor deposition, the present invention provides an organometallic complex and a manufacturing method thereof, which is defined by the formula 1. ; [Formula 1] ; _H 2 AlBH 4: L n ; [Formula 1 in L is a Lewis base (Lewis base) in non-covalent electron pair to the aluminum metal center to the service to be in the amine based organic compound as a heterocyclic amine (heterocyclic amine) or an alkylamine (alkyl amine) in, n is 1 or an integer of 2; ; Aluminum, amines, Alan, precursor