Method for chemical cleaning of hot plate

摘要

The present invention relates to a method of cleaning a hot plate to perform the heating and the chucking of the wafer during the semiconductor manufacturing process will. ; chemical cleaning method of the hot plate of the present invention includes the steps of treatment with a solution to remove the metal film deposited on a hot plate to its top, for discharging the solution phase, washing the hot plate a step, into the step, and the hot plate is dried with nitrogen gas to the hot plate in the baking oven has a technical feature in yirueojim including the step of baking. ; Thus the chemical cleaning method of a hot plate is using a chemical solution, a mixture of hydrofluoric acid and pure water at a predetermined ratio to remove the metal film deposited on a hot plate and the film so as to not be damaged PBN uniform heating of the wafer is made possible by the etching process, not uniform in the ultrasonic cleaning The effect and the advantage such that the etching.