METHOD OF OBTAINING EPITAXIAL FILMS OF (SiC)_1-x(AlN)_x SOLUTIONS

摘要

FIELD: chemistry.;SUBSTANCE: invention concerns technology of obtaining multicomponent semiconductor materials and can be applied in electronic industry for obtaining semiconductor material, solid (SiC)_1-x(AlN)_x solution, in manufacturing of solid power or optic electronic devices based on it, in obtaining cushion (SiC)_1-x(AlN)_x layers for aluminum nitride (AlN) or gallium nitride (GaN) crystal cultivation on silicon carbide (SiC) substrate. Epitaxial films of solid solution of silicon carbide and aluminum nitride (SiC)_1-x(AlN)_XJ where 0x1, are obtained by sedimentation of solid solution to monocrystallic SiC-6H substrate at 1000°C via ion plasma magnetron sputtering of solid polycrystallic (SiC)_1-x(AlN)_x solution target, where 0x1, the sputtering performed under effect of alternate current with frequency of 13.56 MHz.;EFFECT: obtaining high-quality monocrystallic films in the whole range of chemical composition transformation and improved efficiency of high-resistance target sputtering.;1 ex, 3 dwg