Selected Energy Epitaxial Deposition (SEED) and Low Energy Electron Microscopy (LEEM) of AlN, GaN and SiC Thin Films

摘要

The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.