METHOD FOR PRODUCING SOLUTIONS epitaxial films (SiC) 1-x (AlN) x

摘要

method u043fu043eu043bu0443u0447u0435u043du0438u00a0 u044du043fu0438u0442u0430u043au0441u0438u0430u043bu044cu043du044bu0445 films of solid solution carbide u043au0440u0435u043cu043du0438u00a0 with u043du0438u0442u0440u0438u0434u043eu043c u0430u043bu044eu043cu0438u043du0438u00a0 (sic) 1 x (AlN) x, where x is more u043du0443u043bu00a0 but less than one containing deposition etc. solution on a substrate u0432u0435u0440u0434u043eu0433u043e u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au0443u044e sic - 6u043d temperature 1000u0441 ion plasma u043cu0430u0433u043du0435u0442u0440u043eu043du043du044bu043c vaporization, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, spraying a target floor u0438u043au0440u0438u0441u0442u0430u043bu043bu0438u0447u0435u0441u043au043eu0433u043e solid solution (sic) 1 x (AlN) xwhere x u043du0443u043bu00a0 more, but less than one, u043eu0441u0443u0449u0435u0441u0442u0432u043bu00a0u044eu0442 at variable d.c. voltage with a frequency of 13,56 mhz.