Group - iii - nitride transistor device on the silicon substrate

摘要

Group - iii - nitride transistor device on a silicon substrate, comprising group - iii - nitride layers, which, by means of an epitaxial vapor deposition on a silicon substrate were formed, and at least one low temperature chemical vapor deposition - al_xGa_{1 - x}N - intermediate layer with 1 ≦ x & 0,1, wherein the low temperature chemical vapor deposition - al_xGa_{1 - x}-Intermediate layer is enclosed in a buffer layer is arranged completely or partially and the buffer layer is doped with a transition metal.