A method for producing an arsenic - dopant for the pulling of silicon single crystals

摘要

A method for producing a as - dopant for pulling a silicon single crystal, comprising:Mixing of granular, acicular or pulverulent arsenic and pulverulent silicon to a molar ratio of the silicon of 35% to 55% relative to the arsenic andSintering the mixture in a vacuum at a temperature of 816°C. to 944°C, wherein the grain size of the arsenic 2 mm in diameter.