ARSENIC DOPANT FOR PULLING SILICON SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL USING THE DOPANT

摘要

PROBLEM TO BE SOLVED: To provide an arsenic dopant for pulling a silicon single crystal which is safe and with which arsenic can be efficiently doped into the silicon single crystal, the resistivity of the silicon single crystal is lowered drastically, and lowering of the in-plane resistance in the radial direction of the silicon single crystal can be realized; and to provide a method for producing the same, and a method for producing the silicon single crystal using the dopant.;SOLUTION: The silicon single crystal is pulled by a Czochralski method, using the arsenic dopant comprising a mixed sintered compact of arsenic and silicon, in which the molar ratio of silicon to arsenic is 35-55%.;COPYRIGHT: (C)2006,JPO&NCIPI