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Semiconductor layer structure has super lattice with alternative stacked layers of connecting semiconductors of one composition and another composition, where stacked layers have doping agents in specific concentration
Semiconductor layer structure has super lattice with alternative stacked layers of connecting semiconductors of one composition and another composition, where stacked layers have doping agents in specific concentration
The structure has a super lattice (9) with alternative stacked layers of connecting semiconductors with two compositions (a,b). The stacked layers have doping agents in a specific concentration (c), which is different in two layers of equal composition in the super lattice with an undoped layer. The doping agents are assigned in a vertical position (z) within the structure, where the concentration of one stacked layer (9a) of former composition, is assigned by a function and the concentration of another stacked layer (9b) of later composition, is assigned by another function. An independent claim is also included for an opto-electronic element with a semiconductor layer structure.
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