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Semiconductor layer structure has super lattice with alternative stacked layers of connecting semiconductors of one composition and another composition, where stacked layers have doping agents in specific concentration

机译:半导体层结构具有超晶格,该超晶格具有一种成分和另一种成分的连接半导体的交替堆叠层,其中堆叠层具有特定浓度的掺杂剂

摘要

The structure has a super lattice (9) with alternative stacked layers of connecting semiconductors with two compositions (a,b). The stacked layers have doping agents in a specific concentration (c), which is different in two layers of equal composition in the super lattice with an undoped layer. The doping agents are assigned in a vertical position (z) within the structure, where the concentration of one stacked layer (9a) of former composition, is assigned by a function and the concentration of another stacked layer (9b) of later composition, is assigned by another function. An independent claim is also included for an opto-electronic element with a semiconductor layer structure.
机译:该结构具有超晶格(9),该超晶格(9)具有连接半导体的交替堆叠层,具有两种成分(a,b)。堆叠的层具有特定浓度的掺杂剂(c),这在具有未掺杂层的超晶格中具有相同组成的两层中是不同的。掺杂剂在结构内的垂直位置(z)中分配,其中前一个成分的一个堆叠层(9a)的浓度通过函数分配,而后一个成分的另一个堆叠层(9b)的浓度为由另一个功能分配。具有半导体层结构的光电元件也包括独立权利要求。

著录项

  • 公开/公告号DE102006046227A1

    专利类型

  • 公开/公告日2008-01-31

    原文格式PDF

  • 申请/专利权人 OSRAM OPTO SEMICONDUCTORS GMBH;

    申请/专利号DE20061046227

  • 发明设计人 LELL ALFRED;EICHLER CHRISTOPH;

    申请日2006-09-29

  • 分类号H01L33/00;H01L29/15;

  • 国家 DE

  • 入库时间 2022-08-21 19:49:41

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