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Three dimensional semiconductor memory device in which a channel layer has a stacked structure including an outer semiconductor layer and a doped inner semiconductor layer
Three dimensional semiconductor memory device in which a channel layer has a stacked structure including an outer semiconductor layer and a doped inner semiconductor layer
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机译:其中沟道层具有包括外部半导体层和掺杂的内部半导体层的堆叠结构的三维半导体存储器件
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摘要
According to an embodiment, a semiconductor memory device includes a stacked body in which insulating layers and electrode films are alternately stacked, a pillar member arranged in a memory hole that is disposed in the stacked body in a thickness direction, and a semiconductor layer provided below the pillar member. The pillar member has a structure in which a memory film and a channel layer are stacked in order from a side of the stacked body. The channel layer has a stacked structure that includes an outer channel semiconductor layer, an intermediate layer made of an insulating material, and an inner channel semiconductor layer, from a side of the memory film. Both of the outer channel semiconductor layer and the inner channel semiconductor layer are electrically connected to the semiconductor layer.
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