METHOD OF FABRICATING SILICON/DIELECTRIC MULTI-LAYER SEMICONDUCTOR STRUCTURES USING LAYER TRANSFER TECHNOLOGY AND ALSO A THREE-DIMENSIONAL MULTI-LAYER SEMICONDUCTOR DEVICE AND STACKED LAYER TYPE IMAGE SENSOR USING THE SAME METHOD, AND A METHOD OF MANUFACTURING A THREE-DIMENSIONAL MULTI-LAYER SEMICONDUCTOR DEVICE AND THE STACK TYPE IMAGE SENSOR

摘要

Fabrication of a three-dimensional semiconductor structure is provided by the present disclosure. A buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer, which is turned over and is then bonded to a handle wafer. Silicon of the donor wafer is then removed. In the same manner, blue, green, and red diode layers, and a transistor layer are sequentially formed. A metal layer is formed on the transistor layer. Inter-elements contact and pixel separation processes are performed and a support layer is bonded. The whole device is turned over and the nitride film is etched using an etch-stop layer, thus removing the handle wafer. After the elements are separated, packaging is performed to complete the device. Therefore, a back illuminated image sensor of a multi-layer structure can be provided.