Avalanche photodiode for use in Avalanche radiation detector, has electrode arranged lateral to diode layer so that it depletes substrate laterally adjacent to layer, when resistance layer is shielded from diode layer opposite to electrode

摘要

The photodiode (1) has a lateral narrow snubber resistance layer arranged in a semiconductor substrate between a lower diode layer e.g. anode layer, and contacting layers. The resistance layer cancels radiation-generated avalanche breakdown within an Avalanche region. A depletion electrode is arranged partially lateral to the lower diode layer, and is doped corresponding to a type of doping such that the electrode depletes the substrate laterally adjacent to the diode layer, when the resistance layer is shielded from the diode layer opposite to the electrode and is not or partially depleted.