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Neat Temporal Performance of InGaAs/InAlAs Single Photon Avalanche Diode With Stepwise Electric Field in Multiplication Layers

机译：InGaAs / Inalas单光子雪崩二极管的整洁时间表现，乘法层逐步电场

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Yi-Shan Lee; Ping-Li Wu; Yu-Jia Chen; Jin-Wei Shi;
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年度 2021
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1. Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs [J] . Dolgos Denis Journal of Applied Physics . 2012,第10期

机译：具有InP，InAlAs和GaAs倍增层的单光子雪崩二极管中高能载流子传输的全频带Monte Carlo模拟
2. Numerical analysis of multiplication layer on dark current for InGaAs/InP single photon avalanche diodes [J] . Q. Y. Zeng, W. J. Wang, W. D. Hu, Optical and quantum electronics . 2014,第10期

机译：InGaAs / InP单光子雪崩二极管暗电流倍增层的数值分析
3. Theoretical Prediction of High-Performance Room-Temperature InGaAs/Si Single-Photon Avalanche Diode Fabricated by Semiconductor Interlayer Bonding [J] . Ke Shaoying, Chen Zhixiang, Zhou Jinrong, IEEE Transactions on Electron Devices . 2021,第4期

机译：半导体层间粘接制造的高性能室温IngaAs / Si单光子雪崩二极管的理论预测
4. Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers [C] . Yi-Shan Lee, Yu-Jia Chen, Naseem, Conference on Lasers and Electro-Optics . 2020

机译：具有双倍增层的InGaAs / InAlAs单光子雪崩二极管的极快定时性能
5. CMOS single-photon avalanche diodes and micromachined optical filters for integrated fluorescence sensing. [D] . Dandin, Marc Peralte. 2012

机译：CMOS单光子雪崩二极管和微机械滤光片，用于集成荧光传感。
6. InGaAs/InAlAs single photon avalanche diode for 1550 nm photons [O] . Xiao Meng, Shiyu Xie, Xinxin Zhou, 2016

机译：用于1550nm的光子的InGaAs / InAlAs单光子雪崩二极管
7. Numerical Analysis of Multiplication layer for InGaAs/InP Single Photon Avalanche Diodes [O] . Q. Y. Zeng, W. J. Wang, W. D. Hu, 2014

机译：InGaas / Inp单光子雪崩二极管乘法层的数值分析
8. Performance Dependences on Multiplication Layer Thickness for InP/InGaAs Avalanche Photodioes Based on Time Domain Modeling [R] . Xiao, Y. , Bjat, I. , Abedin, M. N. 2005

机译：基于时域建模的Inp / InGaas雪崩光电倍增层厚度性能依赖性

Neat Temporal Performance of InGaAs/InAlAs Single Photon Avalanche Diode With Stepwise Electric Field in Multiplication Layers

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