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PRESERVATION METHOD OF GaN SUBSTRATE, PRESERVED SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR THEM
PRESERVATION METHOD OF GaN SUBSTRATE, PRESERVED SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR THEM
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机译:GaN基板的保存方法,基板保存物,半导体装置及其制造方法
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PROBLEM TO BE SOLVED: To provide a preservation method of a GaN substrate capable of manufacturing a semiconductor device having superior characteristics, a preserved substrate and a semiconductor device, and to provide a manufacturing method for them.;SOLUTION: This preservation method of a GaN substrate preserves the GaN substrate 1, in an atmosphere where oxygen concentration is 18 vol.% and/or steam concentration is below 25 g/m3. In this case, both the surface roughness Ra of a first principal surface of the GaN substrate and the surface roughness Ra of a second principal surface thereof can be set as not larger than 20 nm. The off-angle formed by a principal surface of the GaN substrate and the (0001) plane can be set at 0.05-2° in the 1-100 orientation, and 0-1° in the 11-20 orientation.;COPYRIGHT: (C)2009,JPO&INPIT
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机译:解决的问题:提供一种能够制造具有优异特性的半导体器件的GaN衬底的保存方法,一种保存的衬底和一种半导体器件,并提供一种用于它们的制造方法。衬底在氧气浓度为18 vol。%和/或蒸汽浓度低于25 g / m 3 Sup>的气氛中保存GaN衬底1。在这种情况下,GaN衬底的第一主表面的表面粗糙度Ra和第二主表面的表面粗糙度Ra都可以被设置为不大于20nm。可以将由GaN衬底的主表面和(0001)面形成的偏角设定为0.05-2°。在<1-100>方向和0-1° <11-20>方向。;版权:(C)2009,日本特许厅&INPIT
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