FORMING METHOD OF FERROELECTRIC THIN FILM AND PARAELECTRIC THIN FILM, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a ferroelectric thin film and a paraelectric thin film on an insulating material substrate of a plastic substrate or glass substrate, and to provide a manufacturing method of a ferroelectric memory using the same.;SOLUTION: An amorphous PZT thin film 2 is deposited on an insulating material substrate 1 by a spin coating method. A continuous oscillation laser beam 4 which is shaped linear and has a wavelength of 532 nm is scan-radiated on a surface 3 of oxide 2 for crystallization, thereby excellent ferroelectric characteristics is provided. Since an optimum heat can be applied to a target oxide 2 concentrically for a short period, rising of temperature of the substrate 1 and other layer is suppressed. Since laser beam radiation is executed in a short period, even if the temperature of oxide film abruptly rises, dislocation in composition due to evaporation is minimum. In particular, the insulating material substrate 1 of plastic substrate or glass substrate is used to ensure less thermal loss to the substrate, resulting in effective crystallization.;COPYRIGHT: (C)2010,JPO&INPIT