SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, DESIGNING METHOD OF SEMICONDUCTOR DEVICE, ELECTROOPTICAL DEVICE, ELECTRONIC EQUIPMENT, MANUFACTURING METHOD OF ELECTROOPTICAL DEVICE, AND MANUFACTURING METHOD OF ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To reduce an optical leak current by improvement in characteristic of a semiconductor device, especially, improvement in the light-shielding characteristics.;SOLUTION: The semiconductor device comprises base materials (10A, 10B); a semiconductor film (13) formed on the base materials and extending in a first direction; a gate electrode (G) formed on the semiconductor film with a gate insulating film (15), interposed and extending in a second direction crossing the first direction; a pair of recesses (12) formed on both sides of the semiconductor film to extend in the first direction; and packing materials disposed in the recesses. According to this constitution, the recesses (12) and the packing materials in them limit the incidence of light from the substrate side to reduce the optical leakage current generated in the semiconductor film (especially, in a channel).;COPYRIGHT: (C)2009,JPO&INPIT