首页> 外国专利> EXPOSURE CONDITION DETERMINATION METHOD OF LITHOGRAPHY, EXPOSURE CONDITION DETERMINATION PROGRAM OF LITHOGRAPHY, AND LITHOGRAPHY

EXPOSURE CONDITION DETERMINATION METHOD OF LITHOGRAPHY, EXPOSURE CONDITION DETERMINATION PROGRAM OF LITHOGRAPHY, AND LITHOGRAPHY

机译:照相术的曝光条件确定方法,照相术的曝光条件确定程序和照相术

摘要

PROBLEM TO BE SOLVED: To easily determine ideal exposure conditions in a lithography.;SOLUTION: An exposure condition determination method for determining exposure conditions in the lithography for exposing a pattern to a photosensitive substrate via a projecting means includes a pattern generation step of generating a pattern, an exposure step of exposing a pattern to the photosensitive substrate for a plurality of times by changing the exposure conditions, an imaging step of generating an observation image by capturing an image of the photosensitive substrate where a pattern is exposed for a plurality of times in the exposure process, an image analysis step of analyzing the observation image generated in the imaging process, and a determination step of determining optimum exposure conditions, based on the results of the image analysis in the image analysis process.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:为了容易地确定光刻中的理想曝光条件;解决方案:用于确定光刻中的曝光条件的曝光条件确定方法,该光刻条件用于通过投影装置将图案曝光到感光基板上,该图案生成步骤包括生成图案的步骤。图案,通过改变曝光条件将图案多次曝光于感光基板上的曝光步骤,通过捕获多次曝光了图案的感光基板的图像来生成观察图像的成像步骤在曝光过程中,根据图像分析过程中的图像分析结果,分析在成像过程中生成的观察图像的图像分析步骤和确定最佳曝光条件的确定步骤。 2010,日本特许厅

著录项

  • 公开/公告号JP2009260163A

    专利类型

  • 公开/公告日2009-11-05

    原文格式PDF

  • 申请/专利权人 NIKON CORP;

    申请/专利号JP20080109931

  • 发明设计人 SHIBATA HIROMASA;

    申请日2008-04-21

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 19:44:11

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