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X-ray Exposures of Electro-Deposited Photoresist for Conformal Lithography on Corrugated Surfaces

机译：用于波纹表面上共形光刻的电沉积光刻胶的X射线曝光

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Frank T. Hartley; Chantal Khan Malekband; Steven Nguyen;
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年度 2007
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1. Photoresist characterization using double exposures with interference lithography [J] . Thomas B OReilly, Henry I. Smith Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第1期

机译：使用两次曝光和干涉光刻的光刻胶表征
2. IP-Dip photoresist surfaces for photonic applications prepared by laser lithography and studied by AFM [J] . Jana Durisova, Dusan Pudis, Matej Goraus, Applied Surface Science . 2018,第DECa15期

机译：IP-Dip光致抗蚀剂表面，用于通过激光光刻制备并经AFM研究的光子应用
3. X-ray lithography of SU8 photoresist using fast miniature plasma focus device and its characterization using FTIR spectroscopy [J] . Kalaiselvi S. M. P., Tan T. L., Talebitaher A., Physics Letters, A . 2015,第6期

机译：快速微型等离子体聚焦装置对SU8光致抗蚀剂进行X射线光刻及其FTIR光谱表征
4. X-ray exposures of electrodeposited photoresist for conformal lithography on corrugated surfaces [C] . Frank T. Hartley, Jet Propulsion Lab., Pasadena, Conference on emerging lithographic technologies . 1998

机译：电沉积光刻胶的X射线曝光，用于在波纹表面上进行共形光刻
5. Issues in deep-UV photoresist technology: Characterization and modeling of bulk and surface imaged resists for 248 and 213 nm lithography. [D] . Hutchinson, John Matthew. 1994

机译：深紫外光致抗蚀剂技术中的问题：用于248和213 nm光刻的本体和表面成像抗蚀剂的表征和建模。
6. The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist [O] . Viktor Dan’ko, Ivan Indutnyi, Victor Myn’ko, 2015

机译：使用干涉光刻和硫族化物光刻胶对表面和薄膜进行纳米结构
7. The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist [O] . 2015

机译：使用干涉光刻和硫族化物光刻胶对表面和薄膜进行纳米结构
8. X-Ray Exposure of Electron-Deposited Photoresist for Conformal Lithography on Corrugated Surfaces [R] . Hartley, F., Malek, C., Nguyen, S. 1998

机译：用于波纹表面上共形光刻的电子沉积光刻胶的X射线曝光

X-ray Exposures of Electro-Deposited Photoresist for Conformal Lithography on Corrugated Surfaces

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