NONVOLATILE MEMORY TRANSISTOR, NONVOLATILE MEMORY DEVICE, AND DATA ERASING METHOD OF NONVOLATILE MEMORY TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory transistor capable of reducing damage that may be inflicted on a drain-side gate oxide film; a nonvolatile memory device; and a data erasing method of a nonvolatile memory transistor.;SOLUTION: In a nonvolatile memory 10, data are erased by applying, to a source 12, a voltage causing avalanche breakdown in a part between α a part (a depletion layer tip Dpp) in the vicinity of a source-side end 15a, of a floating gate electrode 15 in a depletion layer Dp extending from the source 12 to the source-side end 15a of the floating gate electrode 15 below a part 18a of a control gate electrode 18 arranged in parallel with the floating gate electrode 15, and a semiconductor substrate 11. Thereby, the erasure is executed from the source 12 side, whereby damage that may be inflicted on the gate oxide film 14 on the drain 13 side can be reduced as compared with the case where writing and erasure are executed from the drain 13 side.;COPYRIGHT: (C)2009,JPO&INPIT