Silicon thin film for silicon-containing CVD material, method of selecting the raw material, as well as film method of a silicon thin film using the raw material

摘要

PROBLEM TO BE SOLVED: To provide a silicon-containing CVD (chemical vapor deposition) raw material required for depositing a silicon thin film at a lower temperature, and to provide a method for selecting the raw material.;SOLUTION: The silicon-containing raw material for a silicon thin film is used for depositing a silicon thin film on a substrate by a CVD method, and satisfies the conditions of (a) where the bond energy Si-X between silicon atoms in the molecule and atoms (X) adjoining to the silicon atoms is found by a computational scientific means, and it is lower than the bond energy between silicon atoms and hydrogen atoms in SiH₄ obtained by the similar means; (b) where the radical reactivity of the silicon atoms in the molecule is found by a computational scientific means, and it is lower than that of the silicon atoms in the SiH₄ molecule obtained by the similar means; and (c) where the radical reactivity of the atoms (X) adjoining to the silicon atoms in the molecule is found by a computational scientific means, and it is equal to or higher than that of hydrogen atoms in the SiH₄ molecule obtained by the similar means. The method for selecting the raw material and the method for depositing a silicon thin film are provided.;COPYRIGHT: (C)2005,JPO&NCIPI