RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR FORMING SILICON-CONTAINING THIN FILM USING THE RAW MATERIAL

摘要

Disclosed is a raw material for chemical vapor deposition, which can be efficiently converted into a high-quality silicon-containing thin film. Also disclosed is a method for forming the silicon-containing thin film by means of chemical vapor deposition using the raw material. Specifically, the raw material for chemical vapor deposition, said raw material containing triisocyanate silane (HSi(NCO)₃), is disclosed. The raw material is suitable as a raw material for forming a silicon-containing thin film, preferably, a silicon oxide thin film, on a base body using the chemical vapor deposition method, especially an ALD method.