METHOD FOR PRODUCING SILICON-OXIDE-BASED THIN FILM, SILICON-OXIDE-BASED THIN FILM AND RAW MATERIAL FOR FORMING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a productive process suitable for producing a silicon-oxide-based thin film of high quality.;SOLUTION: The production method comprises the steps of: preparing a vapor containing tris (ethyl methyl amino) silane obtained by evaporating a raw material containing tris (ethyl methyl amino) silane for forming the thin film; introducing the vapor onto a substrate in a system to form a thin layer containing silicon on the substrate; then discharging a gas remaining in a system; introducing an oxidative gas into the system; and exerting the oxidative gas and heat on the thin layer containing silicon to form the silicon-oxide-based thin film from the previously formed thin film containing silicon.;COPYRIGHT: (C)2007,JPO&INPIT