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Water vapor passivation of the wall facing the plasma

机译:面对等离子体的壁的水蒸气钝化

摘要

Before coating the barrier layer in the via holes with hydrogen radicals, particularly useful chamber passivation process is provided from the remote plasma source (60) to a hydrogen plasma cleaning low-k dielectrics. For each wafer, the chamber is passivated (86) with (other gas it is more chemically absorbed by the plasma facing or above) water vapor passes through the remote plasma source before ignition of the hydrogen plasma. Water vapor is absorbed walls such as quartz parts alumina or remote plasma source (78, 79) formed on the protective monolayer to withstand a sufficient length to protect the walls in the generation of hydrogen plasma. Thereby, of dielectric such as alumina in particular, plasma-facing wall is protected from etching selection Figure [Figure 2]
机译:在用氢自由基涂覆通孔中的阻挡层之前,从远程等离子体源(60)到氢等离子体清洁低k电介质,提供了特别有用的腔室钝化工艺。对于每个晶片,在氢等离子体点火之前,使水蒸气通过遥远的等离子体源(其他气体被面对或上方的等离子体更化学吸收)钝化(86)。水蒸气被吸收的壁,例如形成在保护性单层上的石英部件氧化铝或远程等离子体源(78、79),以承受足够的长度以在产生氢等离子体时保护壁。由此,特别是在诸如氧化铝之类的电介质中,保护了面向等离子体的壁免受蚀刻选择。[图2]

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