SEMICONDUCTOR DEVICE HAVING BIT LINE LANDING PAD AND BORDERLESS CONTACT ON BIT LINE STUD WITH LOCALIZED ETCH STOP MATERIAL LAYER AND FABRICATING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a bit line landing pad and a borderless contact with a localized etch-stop material layer and has a relatively dense structure, and a fabricating method thereof.;SOLUTION: Inter-layer constact studs 220a and 220b are formed, and a conductive line 222 is provided over the inter-layer contact stud 220b. A first etch-stop material layer 224a and a second etch-stop material layer 224b are selectively provided over them. The conductive line 222 is provided with a side wall insulating film 226. Material of the first etch-stop material layer and that of the side wall insulating film are different by etch selectivity. These etch-stop material layers allow outgassing of impurities during subsequent processes and serve as an alignment target when forming an upper contact hole 229a.;COPYRIGHT: (C)2009,JPO&INPIT