MANUFACTURING METHOD OF SPUTTER TARGET, SPUTTER TARGET, SPUTTERING DEVICE, MANUFACTURING METHOD OF GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a sputter target that can easily optimize doping concentration of dopant elements in crystal of a gallium nitride semiconductor formed into a film using a sputtering method.;SOLUTION: Disclosed is the manufacturing method of the sputter target including a mixing step of mixing liquid Ga and dopant elements with each other. The mixing step may be a step of dissolving the dopant elements in the liquid Ga. Further, the mixing step may be a step of particulate dopant elements in the liquid Ga and then solidifying them.;COPYRIGHT: (C)2009,JPO&INPIT