首页> 外国专利> The semiconductor memory device and its lifetime operation starting apparatus, and information recording medium having the semiconductor memory device

The semiconductor memory device and its lifetime operation starting apparatus, and information recording medium having the semiconductor memory device

机译:半导体存储器件及其寿命操作开始装置以及具有该半导体存储器件的信息记录介质

摘要

A memory (1) is provided with: an address control portion (10); a protection film (11); a property deterioration material layer (12); data storage areas (14, 15, 16, 17); and bonding pads (18). The protection film (11) protects an organic semiconductor layer constituting a semiconductor circuit and prevents intrusion of moisture or chemical molecules in the air, light, or the like, into the organic semiconductor layer. Deterioration of the organic semiconductor layer is started by breaking the protection film (11) and using a specified means, thus starting operation of the lifetime period. Furthermore, the property deterioration material layer (12) contains a material for deteriorating the property of the organic semiconductor and deterioration of the organic semiconductor layer is started by diffusing the material into the organic semiconductor layer. IMAGE
机译:存储器(1)具有:地址控制部(10);以及保护膜(11);性能恶化材料层(12);数据存储区(14、15、16、17);和焊盘(18)。保护膜(11)保护构成半导体电路的有机半导体层,并防止空气,光等中的水分或化学分子侵入有机半导体层。通过破坏保护膜(11)并使用指定的手段来开始有机半导体层的劣化,从而开始寿命周期的操作。此外,特性劣化材料层(12)包含用于使有机半导体的性能劣化的材料,并且通过将该材料扩散到有机半导体层中而开始有机半导体层的劣化。 <图像>

著录项

  • 公开/公告号JP4282951B2

    专利类型

  • 公开/公告日2009-06-24

    原文格式PDF

  • 申请/专利权人 パイオニア株式会社;

    申请/专利号JP20020160769

  • 发明设计人 ▲やなぎ▼沢 秀一;黒田 和男;

    申请日2002-05-31

  • 分类号H01L27/28;H01L51/05;H01L27/10;G06F21/24;G06F21/06;G06K19/077;G06K19/10;

  • 国家 JP

  • 入库时间 2022-08-21 19:39:55

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号