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Formation method of the semiconductor device which has the asymmetry induced electricity territory and structure of its semiconductor device
Formation method of the semiconductor device which has the asymmetry induced electricity territory and structure of its semiconductor device
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机译:具有不对称感应电区域和结构的半导体器件的形成方法
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摘要
A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode, a second area under the gate electrode and adjacent the second side of the gate electrode, and a third area under the gate electrode that is between the first area and the second area, wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.
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