首页> 外国专利> Oxide sintered body target transparent conductive thin film for the production, a transparent conductive thin film, the transparent conductive substrate, a display device and an organic electroluminescence device

Oxide sintered body target transparent conductive thin film for the production, a transparent conductive thin film, the transparent conductive substrate, a display device and an organic electroluminescence device

机译:用于制造的氧化物烧结体目标透明导电薄膜,透明导电薄膜,透明导电基板,显示装置和有机电致发光装置

摘要

PROBLEM TO BE SOLVED: To provide a transparent conductive thin film which is superior in surface smoothness, and in which the specific resistance is low, an amorphous characteristic, the surface smoothness, and a characteristic of the specific resistance do not change even by heating the film at less than 200°C, and in which the inner stress is low.;SOLUTION: This has an amorphous structure in which indium oxide is the main component, in which tungsten element is contained by the proportion of W/In atomic ratio of 0.004 to 0.023, and in which zinc element is contained by the proportion of Zn/In atomic ratio of 0.004 to 0.100. The specific resistance is 9.0×10-4Ωcm or less, and preferably 6.0×10-4Ωcm or less. It is preferable that a crystallizing temperature is 200°C or more, that the arithmetrical average height (Ra) of a film surface is 2.0 nm or less, and that the absolute value of the inner stress is 1×1010 dyn/cm2 or less.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:为了提供一种透明导电薄膜,该透明导电薄膜的表面平滑性优异,并且电阻率低,即使通过加热该电阻器,非晶特性,表面平滑度和电阻率特性也不会改变。低于200°C且内部应力低的薄膜;解决方案:这种薄膜具有非晶态结构,其中氧化铟是主要成分,其中钨元素按W / In原子比的比例包含0.004至0.023,并且其中以Zn / In原子比为0.004至0.100的比例包含锌元素。电阻率是9.0×10 10 Sup-4Ω·cm以下,优选为6.0×10 10 Sup-4Ω·cm以下。结晶温度优选为200℃以上,膜表面的算术平均高度(Ra)为2.0nm以下,内应力的绝对值为1×10 <Sup> 10 <。 / Sup> dyn / cm 2 或更少。;版权所有:(C)2005,JPO&NCIPI

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