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Oxide sintered body target transparent conductive thin film for the production, a transparent conductive thin film, the transparent conductive substrate, a display device and an organic electroluminescence device
Oxide sintered body target transparent conductive thin film for the production, a transparent conductive thin film, the transparent conductive substrate, a display device and an organic electroluminescence device
PROBLEM TO BE SOLVED: To provide a transparent conductive thin film which is superior in surface smoothness, and in which the specific resistance is low, an amorphous characteristic, the surface smoothness, and a characteristic of the specific resistance do not change even by heating the film at less than 200°C, and in which the inner stress is low.;SOLUTION: This has an amorphous structure in which indium oxide is the main component, in which tungsten element is contained by the proportion of W/In atomic ratio of 0.004 to 0.023, and in which zinc element is contained by the proportion of Zn/In atomic ratio of 0.004 to 0.100. The specific resistance is 9.0×10-4Ωcm or less, and preferably 6.0×10-4Ωcm or less. It is preferable that a crystallizing temperature is 200°C or more, that the arithmetrical average height (Ra) of a film surface is 2.0 nm or less, and that the absolute value of the inner stress is 1×1010 dyn/cm2 or less.;COPYRIGHT: (C)2005,JPO&NCIPI
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