METHOD FOR SWITCHING MAGNETIC RANDOM ACCESS MEMORY ELEMENTS AND MAGNETIC ELEMENT STRUCTURES

摘要

A method for storing data in a magnetic memory element of an array of elements which avoids inadvertent switching of other elements is disclosed. First and second magnetic fields are applied to a selected magnetic element for a first time interval to switch the element into an intermediate state where minor domains are created. A second value of magnetic fields are then applied large enough to switch the magnetization of the minor domains, but not large enough to switch the magnetization of an adjacent memory cell. Once the minor domain is switched, the magnetization of the magnetic element assumes the state where the major domain has a magnetization direction representing the value of the stored data bit. Reducing the grain size of crystallites contained in a bit reduces the intrinsic anisotropy of the magnetic memory element thus improving bit selectivity.