TRANSPARENT CONDUCTIVE FILM ON P-TYPE LAYER FOR GAN-BASED LED AND METHOD FOR FABRICATING THE SAME

摘要

The present disclosure provides a transparent conductive film on P-type layer of GaN-based LED and a fabricating method thereof. The transparent conductive film is fabricated by Ni/ITO, Al/ITO or NiO/ITO. In one embodiment, the thickness of the Ni layer is 5 Å to 30 Å. The thickness of the Al layer is 5 Å to 30 Å. The thickness of the NiO layer is 5 Å to 40 Å. The thickness of the ITO layer is 1000 Å to 3000 Å. In one embodiment, the fabricating method comprises steps of evaporating one of Ni, Al and NiO layers on a P-type GaN layer, heat-treating a wafer on which the Ni or Al layer is evaporated, then evaporating an ITO layer on the surface of Ni, Al or NiO layer, and heat-treating the wafer on which Ni/ITO, Al/ITO or NiO/ITO layers are evaporated. The transparent conductive film can have high light transmittance within the range of visible light and low specific contact resistance.