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Photolithography Process and Photomask Structure Implemented in a Photolithography Process

机译:光刻工艺中实现的光刻工艺和光掩模结构

摘要

In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.
机译:在光刻工艺中,在衬底上形成光刻胶层。光掩模在基板上对准以转印在基板上的光掩模中限定的图案图像。所述光掩模包括透光率不同的第一图案和第二图案,以及包围所述第二图案的虚设图案,所述虚设图案的透光率低于所述第一图案的透光率。基板通过光掩模暴露于光辐射。然后将光致抗蚀剂层显影以形成图案图像。虚拟图案在尺寸上被配置为允许光透射,但是以足够的量,使得虚拟图案在曝光期间不被成像。

著录项

  • 公开/公告号US2009096090A1

    专利类型

  • 公开/公告日2009-04-16

    原文格式PDF

  • 申请/专利权人 CHING-YU CHANG;

    申请/专利号US20080244857

  • 发明设计人 CHING-YU CHANG;

    申请日2008-10-03

  • 分类号H01L29/40;

  • 国家 US

  • 入库时间 2022-08-21 19:36:03

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