Negative-tone,Ultraviolet Photoresists for Fabricating High Aspect Ratio Microstructures

摘要

UV photoresist materials are disclosed, based on EPON 154 or EPON 165. Preferred embodiments, based on a composite of EPON 154 and EPON 165, spread evenly into a flat, uniform layer, even without spin-coating. The preferred embodiments bond strongly to all substrates, and are resistant to cracking and debonding following exposure and development. The preferred embodiments have high UV transmittance, which promotes uniform photopolymerization throughout a thick layer. Structures may be produced by UV lithography that have a sidewall quality that has previously been attainable only by photolithography with a collimated x-ray source.