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Method of Forming a SiGe DIAC ESD Protection Structure
Method of Forming a SiGe DIAC ESD Protection Structure
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机译:形成SiGe DIAC ESD保护结构的方法
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摘要
A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very thin collector region. ESD protection for a pair of to-be-protected pads is provided by utilizing the base structures and the emitter structures of the SiGe transistors.
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