机译:通过行进液相区方法形成的具有Ge / SiGe结构的器件的SiGe衬底的晶体结构的表征
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 2-1-1. Sengen, Tsukuba, Ibaraki 305-8505, Japan;
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 2-1-1. Sengen, Tsukuba, Ibaraki 305-8505, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Silicon germanium; Germanium; Strain; Traveling liquidus-zone;
机译:行进液相区法生长均匀SiGe单晶的晶体学研究
机译:使用行进液相区法生长的均质SiGe晶体
机译:液相线移动法生长SiGe合金的空穴迁移率
机译:单晶弹性松弛SiGe纳米膜:外延生长无缺陷应变Si / SiGe异质结构的基底。
机译:在Si / SiGe异质结构中对两种量子位器件的进展
机译:激光重结晶和结晶SiGe芯纤维中的成分微观结构题词
机译:蓝宝石衬底上的高迁移率SiGe / Si n-MODFET结构和器件