首页>
外国专利>
REDUCTION OF MEMORY INSTABILITY BY LOCAL ADAPTATION OF RE-CRYSTALLIZATION CONDITIONS IN A CACHE AREA OF A SEMICONDUCTOR DEVICE
REDUCTION OF MEMORY INSTABILITY BY LOCAL ADAPTATION OF RE-CRYSTALLIZATION CONDITIONS IN A CACHE AREA OF A SEMICONDUCTOR DEVICE
展开▼
机译:通过局部还原半导体器件缓存区中的重结晶条件来减少内存不稳定性
展开▼
页面导航
摘要
著录项
相似文献
摘要
By appropriately locally controlling the conditions during a re-growth process in a memory region and a speed-critical device region, the creation of dislocation defects may be reduced in the memory region, thereby enhancing overall stability of respective memory cells. On the other hand, enhanced strain levels may be obtained in the speed-critical device region by performing an efficient amorphization process and re-crystallizing amorphized portions, for instance, in the presence of a rigid material to provide a desired high strain level.
展开▼