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LOW COUPLE EFFECT BIT-LINE VOLTAGE GENERATOR

机译:低耦合效应位线电压发生器

摘要

A bit-line voltage generator is provided. The bit-line voltage generator includes a discharge enhanced bias source and a switch unit. The switch unit includes a clamp transistor having a source, a gate connected to the discharge enhanced bias source, and a drain receiving a voltage; a switch transistor having a gate receiving a control signal, a drain connected to the source of the clamp transistor, and a source connected to a memory array, wherein a parasitic capacitor exists between the gate and the source of the clamp transistor; a resistor having a first terminal connected to the drain of the switch transistor, and a second terminal connected to ground; and a capacitor having a first terminal connected to the drain of the switch transistor, and a second terminal connected to ground, wherein a charge in the parasitic capacitor, when the switch transistor is turned on, is almost identical to that when the switch transistor is turned off, so that a couple effect between the switch unit and the discharge enhanced bias source is reduced, thereby stabilizing a bias applied to the memory array.
机译:提供了位线电压发生器。位线电压发生器包括放电增强偏置源和开关单元。开关单元包括钳位晶体管,该钳位晶体管具有源极,连接至放电增强型偏置源的栅极以及接收电压的漏极。开关晶体管,其栅极接收控制信号,其漏极连接至钳位晶体管的源极,并且其源极连接至存储器阵列,其中,在所述钳位晶体管的栅极与源极之间存在寄生电容器。电阻器的第一端连接到开关晶体管的漏极,第二端接地。电容器的第一端子连接至开关晶体管的漏极,第二端子接地,其中,当开关晶体管导通时,寄生电容器中的电荷与开关晶体管导通时的电荷几乎相同。断开,从而减小了开关单元和放电增强偏置源之间的耦合效应,从而稳定了施加到存储器阵列的偏置。

著录项

  • 公开/公告号US2009168554A1

    专利类型

  • 公开/公告日2009-07-02

    原文格式PDF

  • 申请/专利权人 JER-HAU HSU;YUNG FENG LIN;

    申请/专利号US20070967677

  • 发明设计人 JER-HAU HSU;YUNG FENG LIN;

    申请日2007-12-31

  • 分类号G11C7/12;

  • 国家 US

  • 入库时间 2022-08-21 19:34:50

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