首页>
外国专利>
SUSCEPTOR FOR EPITAXIAL LAYER FORMING APPARATUS, EPITAXIAL LAYER FORMING APPARATUS, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING EPITAXIAL WAFER
SUSCEPTOR FOR EPITAXIAL LAYER FORMING APPARATUS, EPITAXIAL LAYER FORMING APPARATUS, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING EPITAXIAL WAFER
展开▼
机译:表皮层形成装置的基座,表皮层形成装置,表层晶片和表层晶片的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A susceptor for epitaxial layer forming apparatus provided in a layer forming chamber of an epitaxial layer forming apparatus includes: a recessed portion which is provided to accommodate a semiconductor wafer therein and has an approximately circular shape in plan view; and a protruding portion which is provided in the recessed portion in order to support the semiconductor wafer and has an approximately circular shape in plan view. The diameter of the protruding portion is smaller than that of the recessed portion, and the diameter of the protruding portion is set to be a size allowing reaction gas supplied for vapor-phase growth reaction to circulate through an entire boundary between the protruding portion and the semiconductor wafer when the semiconductor wafer is placed in the recessed portion.
展开▼