首页> 外国专利> OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING A WAVELENGTH CONVERSION SUBSTANCE, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR CHIP

OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING A WAVELENGTH CONVERSION SUBSTANCE, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR CHIP

机译:包括波长转换物质的光电半导体芯片,以及包括这种半导体芯片的光电半导体组件,以及用于制造光电半导体芯片的方法

摘要

A semiconductor chip comprises: a semiconductor body which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation of a first wavelength range from its front side; and a first wavelength-converting layer on at least one first partial region of the front side of the semiconductor body with a first wavelength conversion substance, which converts radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region of the front side is free of the first wavelength-converting layer. An optoelectronic component comprising such a semiconductor chip and a method for producing the semiconductor chip are furthermore described.
机译:一种半导体芯片,包括:半导体本体,其包括适于从其正面发射第一波长范围的电磁辐射的半导体层序列;和第一波长转换层,其在半导体本体的前侧的至少一个第一部分区域上具有第一波长转换物质,该第一波长转换层将第一波长范围的辐射转换为第二波长范围的辐射,该第二波长范围的辐射不同于第二波长范围的辐射。第一波长范围,其中,正面的至少一个第二部分区域没有第一波长转换层。此外,描述了一种包括这种半导体芯片的光电子部件以及一种用于制造该半导体芯片的方法。

著录项

  • 公开/公告号US2009272998A1

    专利类型

  • 公开/公告日2009-11-05

    原文格式PDF

  • 申请/专利权人 DIRK BERBEN;FRANK JERMANN;

    申请/专利号US20070301538

  • 发明设计人 DIRK BERBEN;FRANK JERMANN;

    申请日2007-05-18

  • 分类号H01L33;H01L21/30;

  • 国家 US

  • 入库时间 2022-08-21 19:34:07

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