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METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE DEFECT REDUCTION

机译：用于减少半导体器件缺陷的金属锗物理气相沉积

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摘要

The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).

机译：本发明提供一种制造用于半导体器件（ 110 ）的金属硅化物电极（ 100 ）的方法。该方法包括通过物理气相沉积沉积锗原子（ 120 ）和过渡金属原子（ 130 ）形成金属锗合金层（ 140 ）在半导体衬底（ 150 ）上。使金属锗合金层和半导体衬底反应以形成金属硅化物电极。本发明的其他方面包括一种制造集成电路（ 400 ）的方法。 展开▼

著录项

公开/公告号US2008311747A1

专利类型

公开/公告日2008-12-18

原文格式PDF

申请/专利权人 DOUFENG YUE;NOEL RUSSELL;PEIJUN J. CHEN;DOUGLAS E. MERCER;
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申请/专利号US20080185189

发明设计人 NOEL RUSSELL;DOUGLAS E. MERCER;PEIJUN J. CHEN;DOUFENG YUE;
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申请日2008-08-04

分类号H01L21/285;

国家 US

入库时间 2022-08-21 19:34:06

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